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Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
FEATURES
* Schottky diode across each MOSFET * Low on-state resistance * Fast switching * Logic level compatible * Surface mount package
PHN603S
SYMBOL
D4
QUICK REFERENCE DATA
VDS = 25 V
G6 D1
G5 D2
G4 D3
ID = 5.5 A RDS(ON) 35 m (VGS = 10 V) RDS(ON) 55 m (VGS = 4.5 V)
S3
G1 S1
G2 S2
G3
GENERAL DESCRIPTION
Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brushless d.c. motor driver. The PHN603S is supplied in the SOT137-1 (SO24) surface mounting package.
PINNING
PIN 1,4 2 3 5,8 6 7 9,12 10 11 13 14-16, 18-20, 22-24 17 21 DESCRIPTION drain 1 source 1 gate 1 drain 2 source 2 gate 2 drain 3 source 3 gate 3 gate 4 drain 4 gate 5 gate 6
SOT137-1 (SO24)
Top view 1 24
12
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDS VDGR VGS ID IDM Ptot Ptot Tstg, Tj PARAMETER Repetitive peak drain-source voltage Continuous drain-source voltage Drain-gate voltage Gate-source voltage Drain current per device (DC) Drain current per device (pulse peak value) Total power dissipation per device Total power dissipation all devices conducting Storage & operating temperature CONDITIONS Tj = 25 C to 150C Tj 80 C1 RGS = 20 k Ta = 25 C Ta = 100 C Ta = 25 C Ta = 25 C Ta = 100 C Ta = 25 C Ta = 100 C MIN. - 55 MAX. 25 25 25 20 5.5 3.5 22 1.67 0.67 2.78 1.11 150 UNIT V V V V A A A W W W W C
1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited by thermal runaway. October 1998 1 Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
THERMAL RESISTANCES
SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient CONDITIONS FR4 board, minimum footprint Per device All devices conducting TYP. MAX.
PHN603S
UNIT
75 42
-
K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 1 mA VDS = VGS; ID = 1 mA Tj = 150C VGS = 10 V; ID = 5 A VGS = 4.5 V; ID = 2.5 A VGS = 10 V; ID = 5 A; Tj = 150C Gate source leakage current VGS = 20 V; VDS = 0 V Zero gate voltage drain VDS = 25 V; VGS = 0 V; current Tj = 100C Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Input capacitance Output capacitance Feedback capacitance ID = 1 A; VDD = 20 V; VGS = 10 V MIN. 25 1.0 0.4 TYP. MAX. UNIT 1.8 30 50 50 10 0.2 5 17 1.7 5.2 8 11 31 17 650 320 130 35 55 60 100 1.0 10 V V V m m m nA mA mA nC nC nC ns ns ns ns pF pF pF
VDD = 20 V; ID = 1 A; VGS = 10 V; RG = 6 Resistive load VGS = 0 V; VDS = 20 V; f = 1 MHz
SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unless otherwise specified SYMBOL IF IFRM VF trr PARAMETER Continuous forward diode current Repetitive peak forward diode current Diode forward voltage Reverse recovery time CONDITIONS Ta = 25 C MIN. IF = 2.5 A; VGS = 0 V IF = 2.5 A; VGS = 0 V, Tj = 100 C IF = 0.5 A to IR = 0.5 A TYP. 0.4 0.3 20 MAX. 5.5 22 0.6 0.55 UNIT A A V V ns
October 1998
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
PHN603S
Normalised Power Dissipation, PD (%)
120 100 10 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) 0.1 1 100
Transient Thermal Impedance, Zth j-a (K/W) D = 0.5
0.2
0.1 0.05 0.02
MOSFET
P D Single pulse
tp
D = tp/T
T 0.01 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00
t 1E+01
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Ta)
Fig.4. Transient thermal impedance; MOSFET. Zth j-a = f(t); parameter D = tp/T
Normalised Drain Current, ID (%)
120 100 10 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) 0.1 1 100
Transient Thermal Impedance, Zth j-a (K/W)
SCHOTTKY
Single pulse P D
tp
t 0.01 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Ta); conditions: VGS 4.5 V
Fig.5. Transient thermal impedance; Schottky Diode. Zth j-a = f(t)
junctions
100
Peak Pulsed Drain Current, IDM (A) RDS(on) = VDS/ ID
PHN603S
40K/W
40K/W
tp = 100 us
Rth j-b
10 1 ms 10 ms 1 d.c. 0.1 100 ms
6 PAIRS
MOSFET
SCHOTTKY board
MOSFET
40K/W
Rth b-a
0.01 0.1 1 10 Drain-Source Voltage, VDS (V) 100
ambient
Fig.3. Safe operating area. Ta = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Thermal model; typical values. Rth j-b and Rth b-a
October 1998
3
35K/W
40K/W
SCHOTTKY
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
PHN603S
Drain Current, ID (A) 5 4
10V
PHN603S VGS = 3.4 V Tj = 25 C 3.2 V
10 9 8 7 6 5 4 3 2 1 0 0
Transconductance, gfs (S) VDS > ID X RDS(ON) Tj = 25 C
PHN603S
4.5 V
150 C
3 2 1 2.4 V 0 0 1 2 3 4 Drain-Source Voltage, VDS (V) 5 2.6 V 3V 2.8 V
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Drain current, ID (A)
Fig.7. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS
Fig.10. Typical transconductance, Tj = 25 C. gfs = f(ID)
a
Drain-Source On Resistance, RDS(on) (Ohms) 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 Drain Current, ID (A) 4 2.8V 3V 3.2V
PHN603S
2
SOT223 30V Trench
Normalised RDS(ON) = f(Tj)
VGS = 3.4 V
1.5
Tj = 25 C
1
0.5
10V 4.5V
5
0 -50
0
50 Tj / C
100
150
Fig.8. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS
Fig.11. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 C = f(Tj)
Drain current, ID (A) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 150 C VDS > ID X RDS(ON)
PHN603S
5
VGS(TO) / V
PHN1013
4
3
typ.
2
Tj = 25 C
min. 1
3.5
3
Gate-source voltage, VGS (V)
0 -100
-50
0
50 Tj / C
100
150
200
Fig.9. Typical transfer characteristics. ID = f(VGS)
Fig.12. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
October 1998
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
PHN603S
100mA
Drain current, ID (A)
Sub-Threshold Conduction
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Gate-source voltage, VGS (V) ID = 1A Tj = 25 C VDD = 20 V PHN603S
10mA min typ
1mA
100uA
10uA VDS = VGS Tj = 25 C 1uA 0 1 2 3 Gate-source voltage, VGS (V) 4 5
0
5
10 15 Gate charge, QG (nC)
20
25
Fig.13. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C
Fig.15. Typical turn-on gate-charge characteristics. VGS = f(QG)
Source-Drain Diode Current, IF (A) Capacitances, Ciss, Coss, Crss (pF) 10000 PHN603S 5 4.5 4 3.5 3 2.5 1000 Ciss Coss Crss 100 0.1 1 10 Drain-Source Voltage, VDS (V) 100 2 1.5 1 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 150 C Tj = 25 C VGS = 0 V
PHN603S
0.7
0.8
Drain-Source Voltage, VSDS (V)
Fig.14. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.16. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
October 1998
5
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
MECHANICAL DATA
SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
PHN603S
D
E
A X
c y HE vMA
Z 24 13
Q A2 A1 pin 1 index Lp L 1 e bp 12 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
Fig.17. SOT137-1 (SO24) surface mounting package.
Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to Integrated Circuit Packages, Data Handbook IC26. 3. Epoxy meets UL94 V0 at 1/8".
October 1998
6
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PHN603S
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998
7
Rev 1.000

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